2006 |
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HgCdTe detectors technical data sheet.; 2006.
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Gordon NT, Lees DJ, Bowen G, Phillips TS, Haigh M, Jones CL, et al. HgCdTe detectors operating above 200 K. J. Electron. Mater.. 2006;35(6):1140–4.
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Rogalski A. Material considerations for third generation photon detectors.; 2006.
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2005 |
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Kinch MA, Wan C-F Beck J. D. 1/f noise in HgCdTe photodiodes. J. Electron. Mater.. 2005;34(6):928–32.
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2003 |
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Kostiuk T. Heterodyne spectroscopy in the thermal infrared region: a window on physics and chemistry. In: University of Maryland Inn and Conference Center, editor. Proc. International Thermal Detectors Workshop (TDW'03), session 7 (Heterodyne detectors). 3501 University Boulevar East Adelphi, MD 20783; 2003.
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2002 |
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Zhou YD, Becker CR, Ashokan R, Selamet Y, Chang Y, Boreiko RT, et al. Progress in far-infrared detection technology. In: Proc. SPIE. Vol 4795.; 2002. p. 121–8. (Society of Photo-Optical Instrumentation Engineers (SPIE) Conference Series).
Abstract: II-VI intrinsic very long wavelength infrared (VLWIR, λc~20 to 50 μm) materials, HgCdTe alloys as well as HgCdTe/CdTe superlattices, were grown by molecular beam epitaxy (MBE). The layers were characterized by means of X-ray diffraction, conventional Fourier transform infrared spectroscopy, Hall effect measurements and transmittance electron microscopy (TEM). Photoconductor devices were processed and their spectral response was also measured to demonstrate their applicability in the VLWIR region.
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2001 |
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Siemsen KJ, Bernard JE, Madej AA, Marmet L. Absolute frequency measurement of a CO2/OsO4 stabilized laser at 28.8 THz. Appl Phys B: Lasers and Optics. 2001;72:567–73.
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1996 |
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1995 |
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Parvitte B, Thomas X, Courtois D. Wide band (2.5 GHz) infrared heterodyne spectrometer. Int. J. Infrared and Millimeter Waves. 1995;16(9):1533–40.
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1988 |
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Lubzens D, Rosenfeld D, Nemirovsky Y. The noise equivalent temperature difference performance of HgCdTe photodiode array. Infrared Physics. 1988;28(6):417–23.
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