Abstract: This paper describes a compact, self-complementary square-spiral antenna on a GaAs substrate with a broadside high-directivity (~9 dB) frequency-independent pattern when coupled through a silicon hyperhemisphere. The driving-point resistance undulates between ~00 and 300Ω from 200 GHz to 1 THz—much higher than the 72Ω value from Booker's modified formula, but quite beneficial for coupling to high-impedance broadband devices