Kardakova AI, Coumou PCJJ, Finkel MI, Morozov DV, An PP, Goltsman GN, et al. Electron–phonon energy relaxation time in thin strongly disordered titanium nitride films. IEEE Trans Appl Supercond. 2015;25(3):1–4.
Abstract: We have measured the energy relaxation times from the electron bath to the phonon bath in strongly disordered TiN films grown by atomic layer deposition. The measured values of τ eph vary from 12 to 91 ns. Over a temperature range from 3.4 to 1.7 K, they follow T -3 temperature dependence, which are consistent with values of τ eph reported previously for sputtered TiN films. For the most disordered film, with an effective elastic mean free path of 0.35 nm, we find a faster relaxation and a stronger temperature dependence, which may be an additional indication of the influence of strong disorder on a superconductor.
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