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Elezov, M. S.; Shcherbatenko, M. L.; Sych, D. V.; Goltsman, G. N. Development of control method for an optimal quantum receiver 2020 J. Phys.: Conf. Ser. 1695 012126 details   doi
Shurakov, A.; Prikhodko, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Voronov, B.; Goltsman, G. Efficiency of a microwave reflectometry for readout of a THz multipixel Schottky diode direct detector 2020 J. Phys.: Conf. Ser. 1695 012156 details   doi
Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector 2020 Nanomaterials (Basel) 10 1-12 details   doi
Goltsman, G. Quantum-photonic integrated circuits 2019 Proc. IWQO 22-23 details   url
Polyakova, M. I.; Florya, I. N.; Semenov, A. V.; Korneev, A. A.; Goltsman, G. N. Extracting hot-spot correlation length from SNSPD tomography data 2019 J. Phys.: Conf. Ser. 1410 012166 (1 to 4) details   doi
Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. Silicon room temperature IR detectors coated with Ag2S quantum dots 2019 Proc. IWQO 369-371 details   url
Елезов, М. С.; Щербатенко, М. Л.; Сыч, Д. В.; Гольцман, Г. Н. Практические особенности работы оптоволоконного квантового приемника Кеннеди 2019 Proc. IWQO 303-305 details   url
Fedorov, G.; Gayduchenko, I.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. Graphene-based lateral Schottky diodes for detecting terahertz radiation 2018 Proc. Optical Sensing and Detection V 10680 30-39 details   doi
Gayduchenko, I.; Fedorov, G.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. Towards to the development of THz detectors based on carbon nanostructures 2018 J. Phys.: Conf. Ser. 1092 012039 (1 to 4) details   doi
Anfertev, V.; Vaks, V.; Revin, L.; Pentin, I.; Tretyakov, I.; Goltsman, G.; Vinogradov, E. A.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. High resolution THz gas spectrometer based on semiconductor and superconductor devices 2017 EPJ Web Conf. 132 02001 (1 to 2) details   doi
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