PT Journal
AU Shangina, EL
   Smirnov, KV
   Morozov, DV
   Kovalyuk, VV
   Gol’tsman, GN
   Verevkin, AA
   Toropov, AI
TI Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures
SO Bull. Russ. Acad. Sci. Phys.
JI Bull. Russ. Acad. Sci. Phys.
PY 2010
BP 100
EP 102
VL 74
IS 1
DI 10.3103/S1062873810010272
DE 2DEG AlGaAs/GaAs heterostructures; THz heterodyne detectors; IF bandwidth
AB The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s - 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering.
ER