PT Journal
AU Svechnikov, SI
   Okunev, OV
   Yagoubov, PA
   Gol'tsman, GN
   Voronov, BM
   Cherednichenko, SI
   Gershenzon, EM
   Gerecht, E
   Musante, CF
   Wang, Z
   Yngvesson, KS
TI 2.5 THz NbN hot electron mixer with integrated tapered slot antenna
SO IEEE Trans. Appl. Supercond.
JI IEEE Trans. Appl. Supercond.
PY 1997
BP 3548
EP 3551
VL 7
IS 2
DI 10.1109/77.622163
DE NbN HEB mixers
AB A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO[sub:2]membrane. A 0.5 micrometer thick SiO[sub:2]layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO[sub:2]layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO[sub:3]and H[sub:2]O[sub:2].
ER