TY  - CONF
AU  - Elmanov, I.
AU  - Elmanova, A.
AU  - Komrakova, S.
AU  - Golikov, A.
AU  - Kaurova, N.
AU  - Kovalyuk, V.
AU  - Goltsman, G.
AU  - Arakelyan, S.
AU  - Evlyukhin, A.
AU  - Kalachev, A.
AU  - Naumov, A.
PY  - 2019
DA  - 2019//
TI  - Method for determination of resists parameters for photonic - integrated circuits e-beam lithography on silicon nitride platform
T2  - EPJ Web Conf.
BT  - EPJ Web Conf.
SP  - 03012
VL  - 220
KW  - e-beam lithography
KW  - Si3N4
AB  - In the work the thicknesses of the e-beam resists ZEP 520A and ma-N 2400 by using non-destructive method were measured, as well as recipe for the high ratio between the Si3N4 and the resists etching rate was determined. The work has a practical application for e-beam lithography of photonic-integrated circuits and nanophotonics devices based on silicon nitride platform.
SN  - 2100-014X
UR  - https://www.epj-conferences.org/10.1051/epjconf/201922003012
UR  - https://doi.org/10.1051/epjconf/201922003012
DO  - 10.1051/epjconf/201922003012
N1  - exported from refbase (https://db.rplab.ru/refbase/show.php?record=1189), last updated on Sat, 01 May 2021 15:44:56 -0500
ID  - Elmanov_etal2019
ER  -