TY  - CONF
AU  - Gao, J. R.
AU  - Hajenius, M.
AU  - Tichelaar, F. D.
AU  - Voronov, B.
AU  - Grishina, E.
AU  - Klapwijk, T. M.
AU  - Gol'tsman, G.
AU  - Zorman, C. A.
PY  - 2006
DA  - 2006//
TI  - Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers?
T2  - Proc. 17[super:th] Int. Symp. Space Terahertz Technol.
BT  - Proc. 17[super:th] Int. Symp. Space Terahertz Technol.
SP  - 187
EP  - 189
KW  - NbN HEB mixers
AB  - We realized ultra thin NbN films sputtered grown on a 3C-SiC/Si substrate. The film with a thickness of 3.5-4.5 nm shows a 1', of 11.8 K, which is the highest I`, observed among ultra thin NbN films on different substrates. The high-resolution transmission electron microscopy (HRTEM) studies show that the film has a monocrystalline structure, confirming the epitaxial growth on the 3C-SiC. Based on a two-temperature model and input parameters from standard NbN films on Si, simulations predict that the new film can increase the IF bandwidth of a HEB mixer by about a factor of 2 in comparison to the standard films. In addition, we find standard NbN films on Si with a T c of 9.4 K have a thickness of around 5.5 nm, being thicker than expected (3.5 nm).
UR  - https://www.nrao.edu/meetings/isstt/2006.shtml
N1  - exported from refbase (https://db.rplab.ru/refbase/show.php?record=1439), last updated on Mon, 24 May 2021 23:35:46 -0500
ID  - Gao_etal2006
ER  -