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Author  |
Title |
Year |
Publication |
Volume |
Pages |
Links |
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Aksaev, E. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
Interaction of electrons with thermal phonons in YBa2Cu3O7-δ films at low temperatures |
1989 |
JETP Lett. |
50 |
283-286 |
|
|
Andreev, A. F. |
The thermal conductivity of the intermediate state in superconductors |
1964 |
Sov. Phys. JETP |
19 |
1228-1231 |
|
|
Baeva, E. M.; Titova, N. A.; Kardakova, A. I.; Piatrusha, S. U.; Khrapai, V. S. |
Universal bottleneck for thermal relaxation in disordered metallic films |
2020 |
JETP Lett. |
111 |
104-108 |
|
|
Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Lulkin, A.; Semenov, A. D.; Sergeev, A. V. |
Electron-phonon interaction in ultrathin Nb films |
1990 |
Sov. Phys. JETP |
70 |
505-511 |
|
|
Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Sergeev, A. V. |
Light-induced heating of electrons and the time of the inelastic electron-phonon scattering in the YBaCuO compound |
1987 |
JETP Lett. |
46 |
285-287 |
|
|
Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
Heating of electrons in a superconductor in the resistive state by electromagnetic radiation |
1984 |
Sov. Phys. JETP |
59 |
442-450 |
|
|
Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
Nonselective effect of electromagnetic radiation on a superconducting film in the resistive state |
1982 |
JETP Lett. |
36 |
296-299 |
|
|
Gershenzon, E. M.; Gol'tsman, G. N. |
Transitions of electrons between excited states of donors in germanium |
1971 |
JETP Lett. |
14 |
63-65 |
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. |
Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field |
1977 |
Sov. Phys. JETP |
45 |
555-565 |
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. |
Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium |
1971 |
JETP Lett. |
14 |
241 |
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. |
Energy spectrum of acceptors in germanium and its response to a magnetic field |
1977 |
Sov. Phys. JETP |
45 |
769-776 |
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D. |
Measurement of the energy gap in the compound YBaCu3O9-δ on the basis of the IR absorption spectrum |
1987 |
JETP Lett. |
46 |
237-238 |
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. |
Binding energy of a carrier with a neutral impurity atom in germanium and in silicon |
1971 |
JETP Lett. |
14 |
185-186 |
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
Kinetics of electron and hole binding into excitons in germanium |
1983 |
Sov. Phys. JETP |
57 |
369-376 |
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
Cross section for binding of free carriers into excitons in germanium |
1981 |
JETP Lett. |
33 |
574 |
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G. |
Capture of photoexcited carriers by shallow impurity centers in germanium |
1979 |
Sov. Phys. JETP |
50 |
728-734 |
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
Population and lifetime of excited states of shallow impurities in Ge |
1979 |
Sov. Phys. JETP |
49 |
355-362 |
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
Investigation of free excitons in Ge and their condensation at submillimeter wavelengths |
1976 |
Sov. Phys. JETP |
43 |
116-122 |
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
Submillimeter spectroscopy of semiconductors |
1973 |
Sov. Phys. JETP |
37 |
299-304 |
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
Observation of the free-exciton spectrum at submillimeter wavelengths |
1972 |
JETP Lett. |
16 |
161-162 |
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R. |
Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium |
1986 |
Sov. Phys. JETP |
64 |
889-897 |
|
|
Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. |
Energy spectrum of free excitons in germanium |
1973 |
JETP Lett. |
18 |
93 |
|
|
Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. |
Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons |
1975 |
Sov. Phys. JETP |
40 |
311-315 |
|
|
Gershenzon, E. M.; Il'in, V. A.; Litvak-Gorskaya, L. B.; Filonovich, S. R. |
Character of submillimeter photoconductivity in n-lnSb |
1979 |
Sov. Phys. JETP |
49 |
121-128 |
|
|
Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. |
Absorption spectra in electron transitions between excited states of impurities in germanium |
1975 |
JETP Lett. |
22 |
95-97 |
|
|
Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I. |
Intervalley cyclotron-impurity resonance of electrons in n-Ge |
1976 |
JETP Lett. |
24 |
125-128 |
|
|
Gershenzon, E.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
Heating of quasiparticles in a superconducting film in the resistive state |
1981 |
JETP Lett. |
34 |
268-271 |
|
|
Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. |
Carrier lifetime in excited states of shallow impurities in germanium |
1977 |
JETP Lett. |
25 |
539-543 |
|
|
Gol'tsman, G. N.; Gusinskii, E. N.; Malyavkin, A. V.; Ptitsina, N. G.; Selevko, A. G.; Edel'shtein, V. M. |
The excitonic Zeeman effect in uniaxially-strained germanium |
1987 |
Sov. Phys. JETP |
65 |
1233-1241 |
|
|
Gol’tsman, G. N.; Smirnov, K. V. |
Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures |
2001 |
Jetp Lett. |
74 |
474-479 |
|
|
Kaganov, M. L.; Lifshitz, I. M.; Tanatarov, L. V. |
Relaxation between electrons and the crystalline lattice |
1957 |
Sov. Phys. JETP |
4 |
173-178 |
|
|
Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M. |
Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon |
2001 |
Jetp Lett. |
73 |
44-47 |
|
|
Ptitsina, N. G.; Chulkova, G. M.; Gershenzon, E. M. |
Influence of the interference of electron-phonon and electron-impurity scattering on the conductivity of unordered Nb films |
1995 |
JETP |
80 |
960-964 |
|
|
Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. |
Energy relaxation of two-dimensional electrons in the quantum Hall effect regime |
2000 |
JETP Lett. |
71 |
31-34 |
|
|
Tuchak, A. N.; Gol’tsman, G. N.; Kitaeva, G. K.; Penin, A. N.; Seliverstov, S. V.; Finkel, M. I.; Shepelev, A. V.; Yakunin, P. V. |
Generation of nanosecond terahertz pulses by the optical rectification method |
2012 |
JETP Lett. |
96 |
94-97 |
|
|
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
1996 |
JETP Lett. |
64 |
404-409 |
|
|
Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures |
1995 |
JETP Lett. |
61 |
591-595 |
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