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Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol’tsman, G. N.; Elant’ev, A. I. Effect of a strong magnetic field on the spectrum of donors in InSb 1978 Sov. Phys. Semicond. 11 1395-1397 details   url
Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields 1972 Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников 6 362-363 details   url
Gershenson, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Kagane, M. L.; Multanovskii, V. V.; Ptitsina, N. G. Use of submillimeter backward-wave tube spectroscopy in determination of the chemical nature and concentration of residual impurities in pure semiconductors 1983 Sov. Phys. Semicond. 17 908-913 details   url
Gershenzon, E. M.; Goltsman, G. N. Zeeman effect in excited-states of donors in germanium 1972 Sov. Phys. Semicond. 6 509 details   url
Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. Investigation of excited donor states in GaAs 1974 Sov. Phys. Semicond. 7 1248-1250 details   url
Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions 1976 Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников 10 1379-1383 details   url
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