@InProceedings{Trifonov_etal2017,
author="Trifonov, A.
and Tong, C-Y E.
and Grimes, P.
and Lobanov, Y.
and Kaurova, N.
and Blundell, R.
and Goltsman, G.",
title="Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver",
booktitle="IEEE Trans. Appl. Supercond.",
year="2017",
volume="27",
number="4",
pages="6",
optkeywords="Multi-pixel; HEB; silicon-on-insulator; horn array",
abstract="We report on the development of a multi-pixelHot Electron Bolometer (HEB) receiver fabricated usingsilicon membrane technology. The receiver comprises a2 {\texttimes} 2 array of four HEB mixers, fabricated on a singlechip. The HEB mixer chip is based on a superconductingNbN thin film deposited on top of the silicon-on-insulator(SOI) substrate. The thicknesses of the device layer andhandling layer of the SOI substrate are 20 $\mu$m and 300 $\mu$mrespectively. The thickness of the device layer is chosensuch that it corresponds to a quarter-wave in silicon at1.35 THz. The HEB mixer is integrated with a bow-tieantenna structure, in turn designed for coupling to acircular waveguide,",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1111), last updated on Thu, 15 Jul 2021 00:53:13 -0500",
doi="10.1109/TASC.2017.2665585",
opturl="https://doi.org/10.1109/TASC.2017.2665585"
}