%0 Conference Proceedings %T Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver %A Trifonov, A. %A Tong, C-Y E. %A Grimes, P. %A Lobanov, Y. %A Kaurova, N. %A Blundell, R. %A Goltsman, G. %S IEEE Trans. Appl. Supercond. %D 2017 %V 27 %N 4 %F Trifonov_etal2017 %O exported from refbase (https://db.rplab.ru/refbase/show.php?record=1111), last updated on Thu, 15 Jul 2021 00:53:13 -0500 %X We report on the development of a multi-pixelHot Electron Bolometer (HEB) receiver fabricated usingsilicon membrane technology. The receiver comprises a2 × 2 array of four HEB mixers, fabricated on a singlechip. The HEB mixer chip is based on a superconductingNbN thin film deposited on top of the silicon-on-insulator(SOI) substrate. The thicknesses of the device layer andhandling layer of the SOI substrate are 20 μm and 300 μmrespectively. The thickness of the device layer is chosensuch that it corresponds to a quarter-wave in silicon at1.35 THz. The HEB mixer is integrated with a bow-tieantenna structure, in turn designed for coupling to acircular waveguide, %K Multi-pixel %K HEB %K silicon-on-insulator %K horn array %R 10.1109/TASC.2017.2665585 %U https://doi.org/10.1109/TASC.2017.2665585 %P 6