PT Unknown
AU Trifonov, A
   Tong, CE
   Grimes, P
   Lobanov, Y
   Kaurova, N
   Blundell, R
   Goltsman, G
TI Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver
SE IEEE Trans. Appl. Supercond.
PY 2017
BP 6
VL 27
IS 4
DI 10.1109/TASC.2017.2665585
DE Multi-pixel; HEB; silicon-on-insulator; horn array
AB We report on the development of a multi-pixelHot Electron Bolometer (HEB) receiver fabricated usingsilicon membrane technology. The receiver comprises a2 × 2 array of four HEB mixers, fabricated on a singlechip. The HEB mixer chip is based on a superconductingNbN thin film deposited on top of the silicon-on-insulator(SOI) substrate. The thicknesses of the device layer andhandling layer of the SOI substrate are 20 μm and 300 μmrespectively. The thickness of the device layer is chosensuch that it corresponds to a quarter-wave in silicon at1.35 THz. The HEB mixer is integrated with a bow-tieantenna structure, in turn designed for coupling to acircular waveguide,
ER