TY  - JOUR
AU  - Tretyakov, I.
AU  - Shurakov, A.
AU  - Perepelitsa, A.
AU  - Kaurova, N.
AU  - Svyatodukh, S.
AU  - Zilberley, T.
AU  - Ryabchun, S.
AU  - Smirnov, M.
AU  - Ovchinnikov, O.
AU  - Goltsman, G.
PY  - 2019
DA  - 2019//
TI  - Room temperature silicon detector for IR range coated with Ag[sub:2]S quantum dots
T2  - Phys. Status Solidi RRL
JO  - Phys. Status Solidi RRL
SP  - 1900187-(1-6)
VL  - 13
IS  - 9
AB  - For decades, silicon has been the chief technological semiconducting material of modern microelectronics and has a strong influence on all aspects of the society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared (IR) ranges. For photons with an energy less than 1.12 eV, silicon is almost transparent. The expansion of the Si absorption to shorter wavelengths of the IR range is of considerable interest for optoelectronic applications. By creating impurity states in Si, it is possible to cause sub-bandgap photon absorption. Herein, an elegant and effective technology of extending the photo-response of Si toward the IR range is presented. This approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si to create impurity states in the Si bandgap. The specific sensitivity of the room temperature zero-bias Si_Ag 2 Sp detector is 10 11 cm Hz W 1 at 1.55 μm. Given the variety of available QDs and the ease of extending the photo-response of Si toward the IR range, these findings open a path toward future studies and development of Si detectors for technological applications. The current research at the interface of physics and chemistry is also of fundamental importance to the development of Si optoelectronics.
SN  - 1862-6254
UR  - https://onlinelibrary.wiley.com/doi/abs/10.1002/pssr.201900187
UR  - https://doi.org/10.1002/pssr.201900187
DO  - 10.1002/pssr.201900187
N1  - exported from refbase (https://db.rplab.ru/refbase/show.php?record=1149), last updated on Thu, 18 Feb 2021 14:08:36 -0600
ID  - Tretyakov_etal2019
ER  -