@Article{Tretyakov_etal2020,
author="Tretyakov, I.
and Svyatodukh, S.
and Perepelitsa, A.
and Ryabchun, S.
and Kaurova, N.
and Shurakov, A.
and Smirnov, M.
and Ovchinnikov, O.
and Goltsman, G.",
title="Ag$_{2}$S QDs/Si heterostructure-based ultrasensitive SWIR range detector",
journal="Nanomaterials (Basel)",
year="2020",
volume="10",
number="5",
pages="1--12",
optkeywords="detector; quantum dots; short-wave infrared range; silicon",
abstract="In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology.",
optnote="PMID:32365694; PMCID:PMC7712218",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1151), last updated on Sat, 08 May 2021 20:03:22 -0500",
issn="2079-4991",
doi="10.3390/nano10050861",
opturl="http://www.ncbi.nlm.nih.gov/pubmed/32365694",
opturl="https://doi.org/10.3390/nano10050861",
language="English"
}