%0 Journal Article
%T Ag[sub:2]S QDs/Si heterostructure-based ultrasensitive SWIR range detector
%A Tretyakov, I.
%A Svyatodukh, S.
%A Perepelitsa, A.
%A Ryabchun, S.
%A Kaurova, N.
%A Shurakov, A.
%A Smirnov, M.
%A Ovchinnikov, O.
%A Goltsman, G.
%J Nanomaterials (Basel)
%D 2020
%V 10
%N 5
%@ 2079-4991
%G English
%F Tretyakov_etal2020
%O PMID:32365694; PMCID:PMC7712218
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=1151), last updated on Sat, 08 May 2021 20:03:22 -0500
%X In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology.
%K detector
%K quantum dots
%K short-wave infrared range
%K silicon
%R 10.3390/nano10050861
%U http://www.ncbi.nlm.nih.gov/pubmed/32365694
%U https://doi.org/10.3390/nano10050861
%P 1-12