PT Journal
AU Tretyakov, I
   Svyatodukh, S
   Perepelitsa, A
   Ryabchun, S
   Kaurova, N
   Shurakov, A
   Smirnov, M
   Ovchinnikov, O
   Goltsman, G
TI Ag[sub:2]S QDs/Si heterostructure-based ultrasensitive SWIR range detector
SO Nanomaterials (Basel)
JI Nanomaterials (Basel)
PY 2020
BP 1
EP 12
VL 10
IS 5
DI 10.3390/nano10050861
LA English
DE detector; quantum dots; short-wave infrared range; silicon
AB In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology.
ER