TY  - JOUR
AU  - Tretyakov, I.
AU  - Svyatodukh, S.
AU  - Perepelitsa, A.
AU  - Ryabchun, S.
AU  - Kaurova, N.
AU  - Shurakov, A.
AU  - Smirnov, M.
AU  - Ovchinnikov, O.
AU  - Goltsman, G.
PY  - 2020
DA  - 2020//
TI  - Ag[sub:2]S QDs/Si heterostructure-based ultrasensitive SWIR range detector
T2  - Nanomaterials (Basel)
JO  - Nanomaterials (Basel)
SP  - 1
EP  - 12
VL  - 10
IS  - 5
KW  - detector
KW  - quantum dots
KW  - short-wave infrared range
KW  - silicon
AB  - In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology.
SN  - 2079-4991
UR  - http://www.ncbi.nlm.nih.gov/pubmed/32365694
UR  - https://doi.org/10.3390/nano10050861
DO  - 10.3390/nano10050861
LA  - English
N1  - PMID:32365694; PMCID:PMC7712218
ID  - Tretyakov_etal2020
ER  -