@InProceedings{Shurakov_etal2020,
author="Shurakov, A.
and Mikhailov, D.
and Belikov, I.
and Kaurova, N.
and Zilberley, T.
and Prikhodko, A.
and Voronov, B.
and Vasil{\textquoteright}evskii, I.
and Goltsman, G.",
title="Planar Schottky diode with a $\Gamma$-shaped anode suspended bridge",
booktitle="J. Phys.: Conf. Ser.",
year="2020",
volume="1695",
pages="012154",
optkeywords="Schottky diode; GaAs; InP substrate",
abstract="In this paper we report on the fabrication of a planar Schottky diode utilizing a Г-shaped anode suspended bridge. The bridge maintains transition between the top and bottom level planes of a 1.4 {\textmu}m thick GaAs mesa. To implement the profile of a suspended bridge and inward tilt of a mesa wall adjacent to it, we make use of an anisotropic etching of gallium arsenide. The geometry proposed enables the fabrication of a diode with mesa of an arbitrary thickness to mitigate AC losses in the diode layered structure at terahertz frequencies of interest. For frequencies beyond 1 THz, it is also beneficial to use the geometry for the implementation of n-GaAs/n-InGaAs heterojunction Schottky diodes grown on InP substrate.",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1152), last updated on Fri, 30 Apr 2021 14:07:52 -0500",
issn="1742-6588",
doi="10.1088/1742-6596/1695/1/012154",
opturl="https://iopscience.iop.org/article/10.1088/1742-6596/1695/1/012154",
opturl="https://doi.org/10.1088/1742-6596/1695/1/012154"
}