%0 Conference Proceedings
%T Planar Schottky diode with a Γ-shaped anode suspended bridge
%A Shurakov, A.
%A Mikhailov, D.
%A Belikov, I.
%A Kaurova, N.
%A Zilberley, T.
%A Prikhodko, A.
%A Voronov, B.
%A Vasil’evskii, I.
%A Goltsman, G.
%S J. Phys.: Conf. Ser.
%D 2020
%V 1695
%@ 1742-6588
%F Shurakov_etal2020
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=1152), last updated on Fri, 30 Apr 2021 14:07:52 -0500
%X In this paper we report on the fabrication of a planar Schottky diode utilizing a Г-shaped anode suspended bridge. The bridge maintains transition between the top and bottom level planes of a 1.4 µm thick GaAs mesa. To implement the profile of a suspended bridge and inward tilt of a mesa wall adjacent to it, we make use of an anisotropic etching of gallium arsenide. The geometry proposed enables the fabrication of a diode with mesa of an arbitrary thickness to mitigate AC losses in the diode layered structure at terahertz frequencies of interest. For frequencies beyond 1 THz, it is also beneficial to use the geometry for the implementation of n-GaAs/n-InGaAs heterojunction Schottky diodes grown on InP substrate.
%K Schottky diode
%K GaAs
%K InP substrate
%R 10.1088/1742-6596/1695/1/012154
%U https://iopscience.iop.org/article/10.1088/1742-6596/1695/1/012154
%U https://doi.org/10.1088/1742-6596/1695/1/012154
%P 012154