PT Unknown
AU Shurakov, A
   Mikhailov, D
   Belikov, I
   Kaurova, N
   Zilberley, T
   Prikhodko, A
   Voronov, B
   Vasil’evskii, I
   Goltsman, G
TI Planar Schottky diode with a Γ-shaped anode suspended bridge
SE J. Phys.: Conf. Ser.
PY 2020
BP 012154
VL 1695
DI 10.1088/1742-6596/1695/1/012154
DE Schottky diode; GaAs; InP substrate
AB In this paper we report on the fabrication of a planar Schottky diode utilizing a Г-shaped anode suspended bridge. The bridge maintains transition between the top and bottom level planes of a 1.4 µm thick GaAs mesa. To implement the profile of a suspended bridge and inward tilt of a mesa wall adjacent to it, we make use of an anisotropic etching of gallium arsenide. The geometry proposed enables the fabrication of a diode with mesa of an arbitrary thickness to mitigate AC losses in the diode layered structure at terahertz frequencies of interest. For frequencies beyond 1 THz, it is also beneficial to use the geometry for the implementation of n-GaAs/n-InGaAs heterojunction Schottky diodes grown on InP substrate.
ER