TY  - CONF
AU  - Shurakov, A.
AU  - Mikhailov, D.
AU  - Belikov, I.
AU  - Kaurova, N.
AU  - Zilberley, T.
AU  - Prikhodko, A.
AU  - Voronov, B.
AU  - Vasil’evskii, I.
AU  - Goltsman, G.
PY  - 2020
DA  - 2020//
TI  - Planar Schottky diode with a Γ-shaped anode suspended bridge
T2  - J. Phys.: Conf. Ser.
BT  - J. Phys.: Conf. Ser.
SP  - 012154
VL  - 1695
KW  - Schottky diode
KW  - GaAs
KW  - InP substrate
AB  - In this paper we report on the fabrication of a planar Schottky diode utilizing a Г-shaped anode suspended bridge. The bridge maintains transition between the top and bottom level planes of a 1.4 µm thick GaAs mesa. To implement the profile of a suspended bridge and inward tilt of a mesa wall adjacent to it, we make use of an anisotropic etching of gallium arsenide. The geometry proposed enables the fabrication of a diode with mesa of an arbitrary thickness to mitigate AC losses in the diode layered structure at terahertz frequencies of interest. For frequencies beyond 1 THz, it is also beneficial to use the geometry for the implementation of n-GaAs/n-InGaAs heterojunction Schottky diodes grown on InP substrate.
SN  - 1742-6588
UR  - https://iopscience.iop.org/article/10.1088/1742-6596/1695/1/012154
UR  - https://doi.org/10.1088/1742-6596/1695/1/012154
DO  - 10.1088/1742-6596/1695/1/012154
N1  - exported from refbase (https://db.rplab.ru/refbase/show.php?record=1152), last updated on Fri, 30 Apr 2021 14:07:52 -0500
ID  - Shurakov_etal2020
ER  -