@InProceedings{Tretyakov_etal2019,
author="Tretyakov, I.
and Shurakov, A.
and Perepelitsa, A.
and Kaurova, N.
and Svyatodukh, S.
and Zilberley, T.
and Ryabchun, S.
and Smirnov, M.
and Ovchinnikov, O.
and Goltsman, G.",
title="Silicon room temperature IR detectors coated with Ag$_{2}$S quantum dots",
booktitle="Proc. IWQO",
year="2019",
pages="369--371",
optkeywords="silicon detector; quantum dot; IR; surface states",
abstract="For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 $\mu$m. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si{\_}Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications.",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1154), last updated on Sat, 08 May 2021 23:20:19 -0500",
isbn="978-5-89513-451-1",
opturl="http://iwqo.su/en/publications-iwqo-2019"
}