@Article{Shurakov_etal2018,
author="Shurakov, A.
and Mikhalev, P.
and Mikhailov, D.
and Mityashkin, V.
and Tretyakov, I.
and Kardakova, A.
and Belikov, I.
and Kaurova, N.
and Voronov, B.
and Vasil{\textquoteright}evskii, I.
and Gol{\textquoteright}tsman, G.",
title="Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer",
journal="Microelectronic Engineering",
year="2018",
volume="195",
pages="26--31",
abstract="In this paper, we report on the results of the study of the Ti/Au/n-GaAs planar Schottky diodes (PSD) intended for the wideband detection of terahertz radiation. The two types of the PSD devices were compared having either the dual n/n+ silicon dopant profile or the triple one with a moderately doped matching sublayer inserted. All the diodes demonstrated no noticeable temperature dependence of ideality factors and barrier heights, whose values covered the ranges of 1.15--1.50 and 0.75--0.85 eV, respectively. We observed the lowering of the flat band barrier height of \~{}80 meV after introducing the matching sublayer into the GaAs sandwich. For both the devices types, the series resistance value as low as 20 $\Omega$ was obtained. To extract the total parasitic capacitance, we performed the Y-parameters analysis within the electromagnetic modeling of the PSD{\textquoteright}s behavior via the finite-element method. The capacitance values of 12--12.2 fF were obtained and further verified by measuring the diodes{\textquoteright} response voltages in the frequency range of 400--480 GHz. We also calculated the AC current density distribution within the layered structures similar to those being experimentally studied. It was demonstrated that insertion of the moderately Si-doped matching sublayer might be beneficial for implementation of a PSD intended for the operation within the {\textquoteleft}super-THz{\textquoteright} frequency range.",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1155), last updated on Fri, 30 Apr 2021 14:59:48 -0500",
issn="0167-9317",
doi="10.1016/j.mee.2018.03.008",
opturl="https://linkinghub.elsevier.com/retrieve/pii/S0167931718301199",
opturl="https://doi.org/10.1016/j.mee.2018.03.008"
}