PT Journal
AU Shurakov, A
   Mikhalev, P
   Mikhailov, D
   Mityashkin, V
   Tretyakov, I
   Kardakova, A
   Belikov, I
   Kaurova, N
   Voronov, B
   Vasil’evskii, I
   Gol’tsman, G
TI Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer
SO Microelectronic Engineering
JI Microelectronic Engineering
PY 2018
BP 26
EP 31
VL 195
DI 10.1016/j.mee.2018.03.008
AB In this paper, we report on the results of the study of the Ti/Au/n-GaAs planar Schottky diodes (PSD) intended for the wideband detection of terahertz radiation. The two types of the PSD devices were compared having either the dual n/n+ silicon dopant profile or the triple one with a moderately doped matching sublayer inserted. All the diodes demonstrated no noticeable temperature dependence of ideality factors and barrier heights, whose values covered the ranges of 1.15–1.50 and 0.75–0.85 eV, respectively. We observed the lowering of the flat band barrier height of ∼80 meV after introducing the matching sublayer into the GaAs sandwich. For both the devices types, the series resistance value as low as 20 Ω was obtained. To extract the total parasitic capacitance, we performed the Y-parameters analysis within the electromagnetic modeling of the PSD's behavior via the finite-element method. The capacitance values of 12–12.2 fF were obtained and further verified by measuring the diodes' response voltages in the frequency range of 400–480 GHz. We also calculated the AC current density distribution within the layered structures similar to those being experimentally studied. It was demonstrated that insertion of the moderately Si-doped matching sublayer might be beneficial for implementation of a PSD intended for the operation within the ‘super-THz’ frequency range.
ER