PT Unknown
AU Trifonov, A
   Tong, CE
   Lobanov, Y
   Kaurova, N
   Blundell, R
   Gol’tsman, G
TI An investigation of the DC and IF performance of silicon-membrane HEB mixer elements
SE Proc. 26[super:th] Int. Symp. Space Terahertz Technol.
PY 2015
BP 40
DE silicon-membrane HEB waveguide mixer
AB We report on our initial development towards a 2x2 multi-pixel HEB waveguide mixer for operation at 1.4 THz. We have successfully fabricated devices comprising an NbN bridge integrated with antenna test structure using a silicon membrane as the supporting substrate. DC measurements of the test chips demonstrate critical current from 0.1 - 1mA depending on the size of device, with T c of around 10 K and ΔTc ~ 0.8 K.
ER