PT Journal
AU Baeva, EM
   Titova, NA
   Kardakova, AI
   Piatrusha, SU
   Khrapai, VS
TI Universal bottleneck for thermal relaxation in disordered metallic films
SO JETP Lett.
JI Jetp Lett.
PY 2020
BP 104
EP 108
VL 111
IS 2
DI 10.1134/S0021364020020034
DE NbN disordered metallic films; thermal relaxation
AB We study the heat relaxation in current biased metallic films in the regime of strong electron–phonon coupling. A thermal gradient in the direction normal to the film is predicted, with a spatial temperature profile determined by the temperature-dependent heat conduction. In the case of strong phonon scattering, the heat conduction occurs predominantly via the electronic system and the profile is parabolic. This regime leads to the linear dependence of the noise temperature as a function of bias voltage, in spite of the fact that all the dimensions of the film are large compared to the electron–phonon relaxation length. This is in stark contrast to the conventional scenario of relaxation limited by the electron–phonon scattering rate. A preliminary experimental study of a 200-nm-thick NbN film indicates the relevance of our model for materials used in superconducting nanowire single-photon detectors.
ER