%0 Journal Article
%T Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation
%A Fedorov, G.
%A Kardakova, A.
%A Gayduchenko, I.
%A Charayev, I.
%A Voronov, B. M.
%A Finkel, M.
%A Klapwijk, T. M.
%A Morozov, S.
%A Presniakov, M.
%A Bobrinetskiy, I.
%A Ibragimov, R.
%A Goltsman, G.
%J Appl. Phys. Lett.
%D 2013
%V 103
%N 18
%@ 0003-6951
%F Fedorov_etal2013
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=1171), last updated on Thu, 13 May 2021 14:39:22 -0500
%X We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a.
%K carbon nanotubes
%K CNT
%K THz radiation
%K SiO2 substrate
%R 10.1063/1.4828555
%U http://aip.scitation.org/doi/10.1063/1.4828555
%U https://doi.org/10.1063/1.4828555
%P 181121 (1 to 5)