TY  - JOUR
AU  - Fedorov, G.
AU  - Kardakova, A.
AU  - Gayduchenko, I.
AU  - Charayev, I.
AU  - Voronov, B. M.
AU  - Finkel, M.
AU  - Klapwijk, T. M.
AU  - Morozov, S.
AU  - Presniakov, M.
AU  - Bobrinetskiy, I.
AU  - Ibragimov, R.
AU  - Goltsman, G.
PY  - 2013
DA  - 2013//
TI  - Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation
T2  - Appl. Phys. Lett.
JO  - Appl. Phys. Lett.
SP  - 181121 (1 to 5)
VL  - 103
IS  - 18
KW  - carbon nanotubes
KW  - CNT
KW  - THz radiation
KW  - SiO2 substrate
AB  - We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a.
SN  - 0003-6951
UR  - http://aip.scitation.org/doi/10.1063/1.4828555
UR  - https://doi.org/10.1063/1.4828555
DO  - 10.1063/1.4828555
N1  - exported from refbase (https://db.rplab.ru/refbase/show.php?record=1171), last updated on Thu, 13 May 2021 14:39:22 -0500
ID  - Fedorov_etal2013
ER  -