@InProceedings{Elmanov_etal2019,
author="Elmanov, I.
and Elmanova, A.
and Komrakova, S.
and Golikov, A.
and Kaurova, N.
and Kovalyuk, V.
and Goltsman, G.
and Arakelyan, S.
and Evlyukhin, A.
and Kalachev, A.
and Naumov, A.",
title="Method for determination of resists parameters for photonic - integrated circuits e-beam lithography on silicon nitride platform",
booktitle="EPJ Web Conf.",
year="2019",
volume="220",
pages="03012",
optkeywords="e-beam lithography; Si3N4",
abstract="In the work the thicknesses of the e-beam resists ZEP 520A and ma-N 2400 by using non-destructive method were measured, as well as recipe for the high ratio between the Si3N4 and the resists etching rate was determined. The work has a practical application for e-beam lithography of photonic-integrated circuits and nanophotonics devices based on silicon nitride platform.",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1189), last updated on Sat, 01 May 2021 15:44:56 -0500",
issn="2100-014X",
doi="10.1051/epjconf/201922003012",
opturl="https://www.epj-conferences.org/10.1051/epjconf/201922003012",
opturl="https://doi.org/10.1051/epjconf/201922003012"
}