%0 Conference Proceedings %T Method for determination of resists parameters for photonic - integrated circuits e-beam lithography on silicon nitride platform %A Elmanov, I. %A Elmanova, A. %A Komrakova, S. %A Golikov, A. %A Kaurova, N. %A Kovalyuk, V. %A Goltsman, G. %A Arakelyan, S. %A Evlyukhin, A. %A Kalachev, A. %A Naumov, A. %S EPJ Web Conf. %D 2019 %V 220 %@ 2100-014X %F Elmanov_etal2019 %O exported from refbase (https://db.rplab.ru/refbase/show.php?record=1189), last updated on Sat, 01 May 2021 15:44:56 -0500 %X In the work the thicknesses of the e-beam resists ZEP 520A and ma-N 2400 by using non-destructive method were measured, as well as recipe for the high ratio between the Si3N4 and the resists etching rate was determined. The work has a practical application for e-beam lithography of photonic-integrated circuits and nanophotonics devices based on silicon nitride platform. %K e-beam lithography %K Si3N4 %R 10.1051/epjconf/201922003012 %U https://www.epj-conferences.org/10.1051/epjconf/201922003012 %U https://doi.org/10.1051/epjconf/201922003012 %P 03012