PT Unknown
AU Elmanov, I
   Elmanova, A
   Komrakova, S
   Golikov, A
   Kaurova, N
   Kovalyuk, V
   Goltsman, G
   Arakelyan, S
   Evlyukhin, A
   Kalachev, A
   Naumov, A
TI Method for determination of resists parameters for photonic - integrated circuits e-beam lithography on silicon nitride platform
SE EPJ Web Conf.
PY 2019
BP 03012
VL 220
DI 10.1051/epjconf/201922003012
DE e-beam lithography; Si3N4
AB In the work the thicknesses of the e-beam resists ZEP 520A and ma-N 2400 by using non-destructive method were measured, as well as recipe for the high ratio between the Si3N4 and the resists etching rate was determined. The work has a practical application for e-beam lithography of photonic-integrated circuits and nanophotonics devices based on silicon nitride platform.
ER