PT Journal
AU Kovalyuk, V
   Hartmann, W
   Kahl, O
   Kaurova, N
   Korneev, A
   Goltsman, G
   Pernice, WHP
TI Absorption engineering of NbN nanowires deposited on silicon nitride nanophotonic circuits
SO Opt. Express
JI Opt. Express
PY 2013
BP 22683
EP 22692
VL 21
IS 19
DI 10.1364/OE.21.022683
DE SSPD; SNSPD; NbN nanoeires; Si3N4 waveguides
AB We investigate the absorption properties of U-shaped niobium nitride (NbN) nanowires atop nanophotonic circuits. Nanowires as narrow as 20nm are realized in direct contact with Si3N4 waveguides and their absorption properties are extracted through balanced measurements. We perform a full characterization of the absorption coefficient in dependence of length, width and separation of the fabricated nanowires, as well as for waveguides with different cross-section and etch depth. Our results show excellent agreement with finite-element analysis simulations for all considered parameters. The experimental data thus allows for optimizing absorption properties of emerging single-photon detectors co-integrated with telecom wavelength optical circuits.
ER