TY  - JOUR
AU  - Kovalyuk, V.
AU  - Hartmann, W.
AU  - Kahl, O.
AU  - Kaurova, N.
AU  - Korneev, A.
AU  - Goltsman, G.
AU  - Pernice, W. H. P.
PY  - 2013
DA  - 2013//
TI  - Absorption engineering of NbN nanowires deposited on silicon nitride nanophotonic circuits
T2  - Opt. Express
JO  - Opt. Express
SP  - 22683
EP  - 22692
VL  - 21
IS  - 19
KW  - SSPD
KW  - SNSPD
KW  - NbN nanoeires
KW  - Si3N4 waveguides
AB  - We investigate the absorption properties of U-shaped niobium nitride (NbN) nanowires atop nanophotonic circuits. Nanowires as narrow as 20nm are realized in direct contact with Si3N4 waveguides and their absorption properties are extracted through balanced measurements. We perform a full characterization of the absorption coefficient in dependence of length, width and separation of the fabricated nanowires, as well as for waveguides with different cross-section and etch depth. Our results show excellent agreement with finite-element analysis simulations for all considered parameters. The experimental data thus allows for optimizing absorption properties of emerging single-photon detectors co-integrated with telecom wavelength optical circuits.
SN  - 1094-4087
UR  - http://www.ncbi.nlm.nih.gov/pubmed/24104155
UR  - https://doi.org/10.1364/OE.21.022683
DO  - 10.1364/OE.21.022683
N1  - PMID:24104155
ID  - Kovalyuk_etal2013
ER  -