%0 Journal Article
%T Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements
%A Shangina, E. L.
%A Smirnov, K. V.
%A Morozov, D. V.
%A Kovalyuk, V. V.
%A Goltsman, G. N.
%A Verevkin, A. A.
%A Toropov, A. I.
%A Mauskopf, P.
%J Semicond. Sci. Technol.
%D 2011
%V 26
%N 2
%@ 0268-1242
%F Shangina_etal2011
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=1215), last updated on Mon, 03 May 2021 20:35:27 -0500
%X We present measurements of the energy relaxation time, τε, of electrons in a single heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, τε∝nγs with γ = 0.40 ± 0.02 for values of the carrier density, ns, from 1.6 × 1011 to 6.6 × 1011cm−2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas.
%K AlGaAs/GaAs heterojunctions
%R 10.1088/0268-1242/26/2/025013
%U https://iopscience.iop.org/article/10.1088/0268-1242/26/2/025013
%U https://doi.org/10.1088/0268-1242/26/2/025013
%P 025013