PT Journal
AU Shangina, EL
   Smirnov, KV
   Morozov, DV
   Kovalyuk, VV
   Goltsman, GN
   Verevkin, AA
   Toropov, AI
   Mauskopf, P
TI Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements
SO Semicond. Sci. Technol.
JI Semicond. Sci. Technol.
PY 2011
BP 025013
VL 26
IS 2
DI 10.1088/0268-1242/26/2/025013
DE AlGaAs/GaAs heterojunctions
AB We present measurements of the energy relaxation time, τε, of electrons in a single heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, τε∝nγs with γ = 0.40 ± 0.02 for values of the carrier density, ns, from 1.6 × 1011 to 6.6 × 1011cm−2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas.
ER