@Article{Shangina_etal2010,
author="Shangina, E. L.
and Smirnov, K. V.
and Morozov, D. V.
and Kovalyuk, V. V.
and Gol{\textquoteright}tsman, G. N.
and Verevkin, A. A.
and Toropov, A. I.",
title="Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons",
journal="Semicond.",
year="2010",
volume="44",
number="11",
pages="1427--1429",
optkeywords="2DEG; AlGaAs/GaAs heterostructures mixers",
abstract="The temperature and concentration dependences of the frequency bandwidth of terahertz heterodyne AlGaAs/GaAs detectors based on hot electron phenomena with phonon cooling of two-dimensional electrons have been measured by submillimeter spectroscopy with a high time resolution. At a temperature of 4.2 K, the frequency bandwidth at a level of 3 dB (f 3 dB) is varied from 150 to 250 MHz with a change in the concentration n s according to the power law f 3dB ∝ n -0.5 s due to the dominant contribution of piezoelectric phonon scattering. The minimum conversion loss of the semiconductor heterodyne detector is obtained in structures with a high carrier mobility ($\mu$ > 3 {\texttimes} 105 cm2 V-1 s-1 at 4.2 K).",
optnote="Полоса и потери преобразования полупроводникового смесителя с фононным каналом охлаждения двумерных электронов",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1216), last updated on Tue, 06 Jul 2021 11:56:53 -0500",
issn="1063-7826",
doi="10.1134/S1063782610110096",
opturl="http://link.springer.com/10.1134/S1063782610110096",
opturl="https://doi.org/10.1134/S1063782610110096"
}