%0 Journal Article
%T Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons
%A Shangina, E. L.
%A Smirnov, K. V.
%A Morozov, D. V.
%A Kovalyuk, V. V.
%A Gol’tsman, G. N.
%A Verevkin, A. A.
%A Toropov, A. I.
%J Semicond.
%D 2010
%V 44
%N 11
%@ 1063-7826
%F Shangina_etal2010
%O Полоса и потери преобразования полупроводникового смесителя с фононным каналом охлаждения двумерных электронов
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=1216), last updated on Tue, 06 Jul 2021 11:56:53 -0500
%X The temperature and concentration dependences of the frequency bandwidth of terahertz heterodyne AlGaAs/GaAs detectors based on hot electron phenomena with phonon cooling of two-dimensional electrons have been measured by submillimeter spectroscopy with a high time resolution. At a temperature of 4.2 K, the frequency bandwidth at a level of 3 dB (f 3 dB) is varied from 150 to 250 MHz with a change in the concentration n s according to the power law f 3dB ∝ n −0.5 s due to the dominant contribution of piezoelectric phonon scattering. The minimum conversion loss of the semiconductor heterodyne detector is obtained in structures with a high carrier mobility (μ > 3 × 105 cm2 V−1 s−1 at 4.2 K).
%K 2DEG
%K AlGaAs/GaAs heterostructures mixers
%R 10.1134/S1063782610110096
%U http://link.springer.com/10.1134/S1063782610110096
%U https://doi.org/10.1134/S1063782610110096
%P 1427-1429