PT Journal
AU Shangina, EL
   Smirnov, KV
   Morozov, DV
   Kovalyuk, VV
   Gol’tsman, GN
   Verevkin, AA
   Toropov, AI
TI Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons
SO Semicond.
JI Semicond.
PY 2010
BP 1427
EP 1429
VL 44
IS 11
DI 10.1134/S1063782610110096
DE 2DEG; AlGaAs/GaAs heterostructures mixers
AB The temperature and concentration dependences of the frequency bandwidth of terahertz heterodyne AlGaAs/GaAs detectors based on hot electron phenomena with phonon cooling of two-dimensional electrons have been measured by submillimeter spectroscopy with a high time resolution. At a temperature of 4.2 K, the frequency bandwidth at a level of 3 dB (f 3 dB) is varied from 150 to 250 MHz with a change in the concentration n s according to the power law f 3dB ∝ n −0.5 s due to the dominant contribution of piezoelectric phonon scattering. The minimum conversion loss of the semiconductor heterodyne detector is obtained in structures with a high carrier mobility (μ > 3 × 105 cm2 V−1 s−1 at 4.2 K).
ER