TY  - JOUR
AU  - Shangina, E. L.
AU  - Smirnov, K. V.
AU  - Morozov, D. V.
AU  - Kovalyuk, V. V.
AU  - Gol’tsman, G. N.
AU  - Verevkin, A. A.
AU  - Toropov, A. I.
PY  - 2010
DA  - 2010//
TI  - Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons
T2  - Semicond.
JO  - Semicond.
SP  - 1427
EP  - 1429
VL  - 44
IS  - 11
KW  - 2DEG
KW  - AlGaAs/GaAs heterostructures mixers
AB  - The temperature and concentration dependences of the frequency bandwidth of terahertz heterodyne AlGaAs/GaAs detectors based on hot electron phenomena with phonon cooling of two-dimensional electrons have been measured by submillimeter spectroscopy with a high time resolution. At a temperature of 4.2 K, the frequency bandwidth at a level of 3 dB (f 3 dB) is varied from 150 to 250 MHz with a change in the concentration n s according to the power law f 3dB ∝ n −0.5 s due to the dominant contribution of piezoelectric phonon scattering. The minimum conversion loss of the semiconductor heterodyne detector is obtained in structures with a high carrier mobility (μ > 3 × 105 cm2 V−1 s−1 at 4.2 K).
SN  - 1063-7826
UR  - http://link.springer.com/10.1134/S1063782610110096
UR  - https://doi.org/10.1134/S1063782610110096
DO  - 10.1134/S1063782610110096
N1  - Полоса и потери преобразования полупроводникового смесителя с фононным каналом охлаждения двумерных электронов
ID  - Shangina_etal2010
ER  -