@Article{Shangina_etal2010,
author="Shangina, E. L.
and Smirnov, K. V.
and Morozov, D. V.
and Kovalyuk, V. V.
and Gol{\textquoteright}tsman, G. N.
and Verevkin, A. A.
and Toropov, A. I.",
title="Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures",
journal="Bull. Russ. Acad. Sci. Phys.",
year="2010",
volume="74",
number="1",
pages="100--102",
optkeywords="2DEG AlGaAs/GaAs heterostructures; THz heterodyne detectors; IF bandwidth",
abstract="The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) {\texttimes} 10[su11] cm-2. The dependence f3dB ≈ n s - 0.04{\textpm}is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering.",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1217), last updated on Tue, 06 Jul 2021 11:35:38 -0500",
issn="1062-8738",
doi="10.3103/S1062873810010272",
opturl="http://link.springer.com/10.3103/S1062873810010272",
opturl="https://doi.org/10.3103/S1062873810010272"
}