%0 Journal Article
%T Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures
%A Shangina, E. L.
%A Smirnov, K. V.
%A Morozov, D. V.
%A Kovalyuk, V. V.
%A Gol’tsman, G. N.
%A Verevkin, A. A.
%A Toropov, A. I.
%J Bull. Russ. Acad. Sci. Phys.
%D 2010
%V 74
%N 1
%@ 1062-8738
%F Shangina_etal2010
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=1217), last updated on Tue, 06 Jul 2021 11:35:38 -0500
%X The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s - 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering.
%K 2DEG AlGaAs/GaAs heterostructures
%K THz heterodyne detectors
%K IF bandwidth
%R 10.3103/S1062873810010272
%U http://link.springer.com/10.3103/S1062873810010272
%U https://doi.org/10.3103/S1062873810010272
%P 100-102