TY  - JOUR
AU  - Shangina, E. L.
AU  - Smirnov, K. V.
AU  - Morozov, D. V.
AU  - Kovalyuk, V. V.
AU  - Gol’tsman, G. N.
AU  - Verevkin, A. A.
AU  - Toropov, A. I.
PY  - 2010
DA  - 2010//
TI  - Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures
T2  - Bull. Russ. Acad. Sci. Phys.
JO  - Bull. Russ. Acad. Sci. Phys.
SP  - 100
EP  - 102
VL  - 74
IS  - 1
KW  - 2DEG AlGaAs/GaAs heterostructures
KW  - THz heterodyne detectors
KW  - IF bandwidth
AB  - The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s - 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering.
SN  - 1062-8738
UR  - http://link.springer.com/10.3103/S1062873810010272
UR  - https://doi.org/10.3103/S1062873810010272
DO  - 10.3103/S1062873810010272
N1  - exported from refbase (https://db.rplab.ru/refbase/show.php?record=1217), last updated on Tue, 06 Jul 2021 11:35:38 -0500
ID  - Shangina_etal2010
ER  -