PT Unknown
AU Romanov, NR
   Zolotov, PI
   Vakhtomin, YB
   Divochiy, AV
   Smirnov, KV
TI Electron diffusivity measurements of VN superconducting single-photon detectors
SE J. Phys.: Conf. Ser.
PY 2018
BP 051032
VL 1124
DI 10.1088/1742-6596/1124/5/051032
DE SSPD; SNSPD; VN
AB The research of ultrathin vanadium nitride (VN) films as a promising candidate for superconducting single-photon detectors (SSPD) is presented. The electron diffusivity measurements are performed for such devices. Devices that were fabricated out from 9.9 nm films had diffusivity coefficient of 0.41 cm2/s and from 5.4 nm – 0.54 cm2/s. Obtained values are similar to other typical SSPD materials. The diffusivity that increases along with decreasing of the film thickness is expected to allow fabrication of the devices with improved characteristics. Fabricated VN SSPDs showed prominent single-photon response in the range 0.9-1.55 µm.
ER