@InProceedings{Seleznev_etal2016,
author="Seleznev, V. A.
and Divochiy, A. V.
and Vakhtomin, Y. B.
and Morozov, P. V.
and Zolotov, P. I.
and Vasil{\textquoteright}ev, D. D.
and Moiseev, K. M.
and Malevannaya, E. I.
and Smirnov, K. V.",
title="Superconducting detector of IR single-photons based on thin WSi films",
booktitle="J. Phys.: Conf. Ser.",
year="2016",
volume="737",
pages="012032",
optkeywords="WSi SSPD; SNSPD; NEP",
abstract="We have developed the deposition technology of WSi thin films 4 to 9 nm thick with high temperature values of superconducting transition (Tc{\textasciitilde}4 K). Based on deposed films there were produced nanostructures with indicative planar sizes {\textasciitilde}100 nm, and the research revealed that even on nanoscale the films possess of high critical temperature values of the superconducting transition (Tc{\textasciitilde}3.3-3.7 K) which certifies high quality and homogeneity of the films created. The first experiments on creating superconducting single-photon detectors showed that the detectors{\textquoteright} SDE (system detection efficiency) with increasing bias current (I b) reaches a constant value of {\textasciitilde}30{\%} (for X=1.55 micron) defined by infrared radiation absorption by the superconducting structure. To enhance radiation absorption by the superconductor there were created detectors with cavity structures which demonstrated a practically constant value of quantum efficiency >65{\%} for bias currents Ib>0.6-Ic. The minimal dark counts level (DC) made 1 s-1 limited with background noise. Hence WSi is the most promising material for creating single-photon detectors with record SDE/DC ratio and noise equivalent power (NEP).",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1235), last updated on Tue, 04 May 2021 18:27:05 -0500",
issn="1742-6588",
doi="10.1088/1742-6596/737/1/012032",
opturl="https://iopscience.iop.org/article/10.1088/1742-6596/737/1/012032",
opturl="https://doi.org/10.1088/1742-6596/737/1/012032"
}