%0 Conference Proceedings
%T Superconducting detector of IR single-photons based on thin WSi films
%A Seleznev, V. A.
%A Divochiy, A. V.
%A Vakhtomin, Y. B.
%A Morozov, P. V.
%A Zolotov, P. I.
%A Vasil'ev, D. D.
%A Moiseev, K. M.
%A Malevannaya, E. I.
%A Smirnov, K. V.
%S J. Phys.: Conf. Ser.
%D 2016
%V 737
%@ 1742-6588
%F Seleznev_etal2016
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=1235), last updated on Tue, 04 May 2021 18:27:05 -0500
%X We have developed the deposition technology of WSi thin films 4 to 9 nm thick with high temperature values of superconducting transition (Tc~4 K). Based on deposed films there were produced nanostructures with indicative planar sizes ~100 nm, and the research revealed that even on nanoscale the films possess of high critical temperature values of the superconducting transition (Tc~3.3-3.7 K) which certifies high quality and homogeneity of the films created. The first experiments on creating superconducting single-photon detectors showed that the detectors' SDE (system detection efficiency) with increasing bias current (I b) reaches a constant value of ~30% (for X=1.55 micron) defined by infrared radiation absorption by the superconducting structure. To enhance radiation absorption by the superconductor there were created detectors with cavity structures which demonstrated a practically constant value of quantum efficiency >65% for bias currents Ib>0.6-Ic. The minimal dark counts level (DC) made 1 s-1 limited with background noise. Hence WSi is the most promising material for creating single-photon detectors with record SDE/DC ratio and noise equivalent power (NEP).
%K WSi SSPD
%K SNSPD
%K NEP
%R 10.1088/1742-6596/737/1/012032
%U https://iopscience.iop.org/article/10.1088/1742-6596/737/1/012032
%U https://doi.org/10.1088/1742-6596/737/1/012032
%P 012032