TY  - CONF
AU  - Seleznev, V. A.
AU  - Divochiy, A. V.
AU  - Vakhtomin, Y. B.
AU  - Morozov, P. V.
AU  - Zolotov, P. I.
AU  - Vasil'ev, D. D.
AU  - Moiseev, K. M.
AU  - Malevannaya, E. I.
AU  - Smirnov, K. V.
PY  - 2016
DA  - 2016//
TI  - Superconducting detector of IR single-photons based on thin WSi films
T2  - J. Phys.: Conf. Ser.
BT  - J. Phys.: Conf. Ser.
SP  - 012032
VL  - 737
KW  - WSi SSPD
KW  - SNSPD
KW  - NEP
AB  - We have developed the deposition technology of WSi thin films 4 to 9 nm thick with high temperature values of superconducting transition (Tc~4 K). Based on deposed films there were produced nanostructures with indicative planar sizes ~100 nm, and the research revealed that even on nanoscale the films possess of high critical temperature values of the superconducting transition (Tc~3.3-3.7 K) which certifies high quality and homogeneity of the films created. The first experiments on creating superconducting single-photon detectors showed that the detectors' SDE (system detection efficiency) with increasing bias current (I b) reaches a constant value of ~30% (for X=1.55 micron) defined by infrared radiation absorption by the superconducting structure. To enhance radiation absorption by the superconductor there were created detectors with cavity structures which demonstrated a practically constant value of quantum efficiency >65% for bias currents Ib>0.6-Ic. The minimal dark counts level (DC) made 1 s-1 limited with background noise. Hence WSi is the most promising material for creating single-photon detectors with record SDE/DC ratio and noise equivalent power (NEP).
SN  - 1742-6588
UR  - https://iopscience.iop.org/article/10.1088/1742-6596/737/1/012032
UR  - https://doi.org/10.1088/1742-6596/737/1/012032
DO  - 10.1088/1742-6596/737/1/012032
N1  - exported from refbase (https://db.rplab.ru/refbase/show.php?record=1235), last updated on Tue, 04 May 2021 18:27:05 -0500
ID  - Seleznev_etal2016
ER  -