%0 Journal Article
%T Tunnel field-effect transistors for sensitive terahertz detection
%A Gayduchenko, I.
%A Xu, S. G.
%A Alymov, G.
%A Moskotin, M.
%A Tretyakov, I.
%A Taniguchi, T.
%A Watanabe, K.
%A Goltsman, G.
%A Geim, A. K.
%A Fedorov, G.
%A Svintsov, D.
%A Bandurin, D. A.
%J Nat. Commun.
%D 2021
%V 12
%N 1
%@ 2041-1723
%G English
%F Gayduchenko_etal2021
%O PMID:33483488; PMCID:PMC7822863
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=1261), last updated on Thu, 06 May 2021 23:41:26 -0500
%X The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG's electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/[Formula: see text]) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors' responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor.
%K field-effect transistors
%K bilayer graphene
%K BLG
%R 10.1038/s41467-020-20721-z
%U http://www.ncbi.nlm.nih.gov/pubmed/33483488
%U https://doi.org/10.1038/s41467-020-20721-z
%P 543