TY  - JOUR
AU  - Gayduchenko, I.
AU  - Xu, S. G.
AU  - Alymov, G.
AU  - Moskotin, M.
AU  - Tretyakov, I.
AU  - Taniguchi, T.
AU  - Watanabe, K.
AU  - Goltsman, G.
AU  - Geim, A. K.
AU  - Fedorov, G.
AU  - Svintsov, D.
AU  - Bandurin, D. A.
PY  - 2021
DA  - 2021//
TI  - Tunnel field-effect transistors for sensitive terahertz detection
T2  - Nat. Commun.
JO  - Nat. Commun.
SP  - 543
VL  - 12
IS  - 1
KW  - field-effect transistors
KW  - bilayer graphene
KW  - BLG
AB  - The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG's electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/[Formula: see text]) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors' responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor.
SN  - 2041-1723
UR  - http://www.ncbi.nlm.nih.gov/pubmed/33483488
UR  - https://doi.org/10.1038/s41467-020-20721-z
DO  - 10.1038/s41467-020-20721-z
LA  - English
N1  - PMID:33483488; PMCID:PMC7822863
ID  - Gayduchenko_etal2021
ER  -