TY  - JOUR
AU  - Antipov, S.
AU  - Trifonov, A.
AU  - Krause, S.
AU  - Meledin, D.
AU  - Kaurova, N.
AU  - Rudzinski, M.
AU  - Desmaris, V.
AU  - Belitsky, V.
AU  - Goltsman, G.
PY  - 2019
DA  - 2019//
TI  - Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer
T2  - Supercond. Sci. Technol.
JO  - Supercond. Sci. Technol.
SP  - 075003
VL  - 32
IS  - 7
PB  - IOP Publishing
KW  - NbN HEB mixer
KW  - GaN buffer layer
KW  - sapphire substrate
AB  - We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer.
UR  - https://doi.org/10.1088/1361-6668/ab137b
DO  - 10.1088/1361-6668/ab137b
N1  - exported from refbase (https://db.rplab.ru/refbase/show.php?record=1277), last updated on Fri, 07 May 2021 19:34:39 -0500
ID  - Antipov_etal2019
ER  -